V60100C-M3 rectifier equivalent, dual high voltage trench mos barrier schottky rectifier.
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106 .
For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and .
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 120.19KB)