Datasheet4U Logo Datasheet4U.com

V40D100C-M3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier

V40D100C-M3 Description

www.vishay.com V40D100C-M3, V40D100CHM3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.40 V a.

V40D100C-M3 Features

* Trench MOS Schottky technology
* Very low profile - typical height of 1.7 mm
* Ideal for automated placement
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C

V40D100C-M3 Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection in commercial, inductrial, and automotive application. MECHANICAL DATA Case: TO-263AC (SMPD) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - hal

📥 Download Datasheet

Preview of V40D100C-M3 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
V40D100C-M3
Manufacturer
Vishay ↗
File Size
99.13 KB
Datasheet
V40D100C-M3-Vishay.pdf
Description
Dual High-Voltage Trench MOS Barrier Schottky Rectifier

📁 Related Datasheet

📌 All Tags

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Vishay
Vishay V40D100C-M3-like datasheet