logo

V35PWM12 Datasheet, Vishay

V35PWM12 rectifier equivalent, trench mos barrier schottky rectifier.

V35PWM12 Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 116.65KB)

V35PWM12 Datasheet

Features and benefits


* Very low profile - typical height of 1.3 mm
* Trench MOS Schottky technology
* Ideal for automated placement
* Low forward voltage drop, low power losse.

Application

For use in low voltage high frequency DC/DC converters, freewheeling diodes, and polarity protection applications. MECHA.

Image gallery

V35PWM12 Page 1 V35PWM12 Page 2 V35PWM12 Page 3

TAGS

V35PWM12
Trench
MOS
Barrier
Schottky
Rectifier
Vishay

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts