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V30D202C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Features

  • Trench MOS Schottky technology generation 2 Available.
  • Very low profile - typical height of 1.7 mm.
  • Ideal for automated placement.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
  • AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 TY.

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Datasheet Details

Part number V30D202C
Manufacturer Vishay
File Size 117.45 KB
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet V30D202C Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.vishay.com V30D202C Vishay General Semiconductor Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier eSMP® Series SMPD (TO-263AC) K 1 2 Top View Bottom View V30D202C PIN 1 K PIN 2 HEATSINK ADDITIONAL RESOURCES 3D 3D 3D Models PRIMARY CHARACTERISTICS IF(AV) 2 x 15.0 A VRRM IFSM VF at IF = 15.0 A (TA = 125 °C) 200 V 260 A 0.66 V TJ max. 175 °C Package SMPD (TO-263AC) Circuit configuration Common cathode FEATURES • Trench MOS Schottky technology generation 2 Available • Very low profile - typical height of 1.
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