* Trench MOS Schottky technology
* Very low profile - typical height of 1.7 mm
* Ideal for automated placement
* Low forward voltage drop, low power losse.

For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. MECH.

V20DL45

V20DL45-M3

V20DL45HM3

V20D100C

V20D170C

V20D202C

V20D45C

V20D60C

V20DM100C

V20DM120

V20DM120C

V20DM120C-M3

V20DM120CHM3

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