Datasheet4U.com

V12WM100C-M3 - Dual Trench MOS Barrier Schottky Rectifier

Product Overview

Vishay

📥 Download Datasheet

V12WM100C-M3 Dual Trench MOS Barrier Schottky Rectifier by Vishay - Datasheet Preview — Datasheet preview – V12WM100C-M3

Datasheet Details

Part number	V12WM100C-M3
Manufacturer	Vishay
File Size	117.67 KB
Description	Dual Trench MOS Barrier Schottky Rectifier
Datasheet	V12WM100C-M3 Datasheet
Additional preview pages of the V12WM100C-M3 datasheet.

Product details

Features

Trench MOS Schottky technology.
Ideal for automated placement.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
Material categorization: For definitions of compliance please see www. vishay. com/doc?99912.

📁 Similar Datasheet

V120CH8 - Metal-Oxide Varistors (Littelfuse)
V120MA1A - Metal-Oxide Varistors (Littelfuse)
V120MA2B - Metal-Oxide Varistors (Littelfuse)
V120MA2S - Metal-Oxide Varistors (Littelfuse)
V120MLA1210 - Multilayer Transient Voltage Surge Suppressors (Littelfuse)
V120ZA05P - Varistors (Littelfuse)
V120ZA1P - Varistors (Littelfuse)
V120ZA20P - Varistors (Littelfuse)

Other Datasheets by Vishay

V12W60C-M3 - Dual Trench MOS Barrier Schottky Rectifier
V12P10 - Trench MOS Barrier Schottky Rectifier
V12P12 - Trench MOS Barrier Schottky Rectifier
V12P15 - Trench MOS Barrier Schottky Rectifier
V12P45 - Trench MOS Barrier Schottky Rectifier
V12P6 - Trench MOS Barrier Schottky Rectifier

Published: Apr 8, 2016 |