Datasheet Summary
.vishay.
V10PM12-M3, V10PM12HM3
Vishay General Semiconductor
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.53 V at IF = 5 A
TMBS® eSMP® Series
1 2
TO-277A (SMPC)
K Cathode
Anode 1 Anode 2
Features
- Very low profile
- typical height of 1.1 mm
Available
- Ideal for automated placement
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
- AEC-Q101 qualified
- Material categorization: For definitions of pliance please see .vishay./doc?99912
TYPICAL APPLICATIONS
For use in low voltage high frequency...