V10P10 - Trench MOS Barrier Schottky Rectifier

Vishay

Key Features

Very low profile - typical height of 1.1 mm Available.
Ideal for automated placement.
Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
AEC-Q101 qualified available - Automotive ordering code; base P/NHM3.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 LINKS.

V10P10 trench mos barrier schottky rectifier by Vishay - Datasheet Preview

Datasheet Details

Part number	V10P10
Manufacturer	Vishay
File Size	94.70 KB
Description	Trench MOS Barrier Schottky Rectifier
Datasheet	V10P10 Datasheet

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Full PDF Text Transcription (Reference)

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www.vishay.com V10P10 Vishay General Semiconductor High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.453 V at IF = 5 A eSMP® Series K 1 2 SMPC (TO-277A) K Cathode Anode 1 Anode 2 FEATURES • Very low profile - typical height of 1.1 mm Available • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code; base P/NHM3 • Material categorization: for definitions of compliance please see www.vishay.