UGB8DT Overview
8.0 A 50 V to 200 V 150 A 20 ns 0.95 V 150.
UGB8DT Key Features
- Glass passivated chip junction
- Ultrafast recovery time
- Low switching losses, high efficiency
- High forward surge capability
- Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
- Solder dip 260 °C, 40 s (for TO-220AC and ITO-220AC package)
- ponent in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
