TCET1108G Overview
consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic dual inline package. AGENCY APPROVALS UL 1577 cUL 1577 DIN EN 60747-5-5 (VDE 0884-5) BSI: EN 62368-1:2014 CQC GB4943.1-2011 CQC GB8898-2011.
TCET1108G Key Features
- High mon mode rejection
- Low temperature coefficient of CTR
- CTR offered in 7 groups
- Reinforced isolation provides circuit
- Isolation materials according to UL 94 V-0
- Pollution degree 2 (DIN / VDE 0110 / resp. IEC 60664)
- Climatic classification 55 / 100 / 21 (IEC 60068 part 1)
- Rated impulse voltage (transient overvoltage) VIOTM = 6 kVpeak
- Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV
- Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS
TCET1108G Applications
- For application class I to IV at mains voltage ≤ 300 V
- For application class I to III at mains voltage ≤ 600 V