TCET1108G
Description
consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic dual inline package. AGENCY APPROVALS - UL 1577 - cUL 1577 - DIN EN 60747-5-5 (VDE 0884-5) - BSI: EN 62368-1:2014 - CQC GB4943.1-2011 - CQC GB8898-2011.
Key Features
- High mon mode rejection
- Low temperature coefficient of CTR
- CTR offered in 7 groups
- Reinforced isolation provides circuit protection against electrical shock (safety class II)
- Isolation materials according to UL 94 V-0
- Pollution degree 2 (DIN / VDE 0110 / resp. IEC
- Climatic classification 55 / 100 / 21 (IEC 60068 part
- Rated impulse voltage (transient overvoltage) VIOTM = 6 kVpeak
- Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV
- Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS
