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SiZ340DDT
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFETs
PowerPAIR® 3 x 3 G2 S2 8
S2 7 S2 6
5
S1/D2
(Pin 9)
3 mm
1
3 mm
Top View
D1
1
4
3
2 G1 D1
D1
D1
Bottom View
PRODUCT SUMMARY
VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) a Configuration
CHANNEL-1 CHANNEL-2
30
30
0.092
0.005
0.0155
0.0075
3.7
6.3
33.6
63
Dual
FEATURES
• TrenchFET® Gen IV power MOSFETs
• 100 % Rg and UIS tested • PowerPAIR® integrated half-bridge MOSFET
power stage
• Optimized Qgd/Qgs ratio improves switching characteristics
• Material categorization: for definitions of compliance please see www.vishay.