Full PDF Text Transcription for SiSS10DN (Reference)
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SiSS10DN. For precise diagrams, and layout, please refer to the original PDF.
www.vishay.com SiSS10DN Vishay Siliconix N-Channel 40 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 40 RDS(on) () (MAX.) 0.00265 at VGS = 10 V 0.00360 at VGS = 4.5 V ID (A) a, ...
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on) () (MAX.) 0.00265 at VGS = 10 V 0.00360 at VGS = 4.5 V ID (A) a, g 60 60 Qg (TYP.) 23 nC PowerPAK® 1212-8S D D D 6 7 5 D 8 3.3 mm 1 Top View 3.3 mm 1 4 3 S 2 S S G Bottom View Ordering Information: SiSS10DN-T1-GE3 (lead (Pb)-free and halogen-free) FEATURES • TrenchFET® Gen IV power MOSFET • Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.
SiSS10DN Datasheet
