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SiJ188DP - 60V N-Channel MOSFET

Features

  • TrenchFET® Gen IV power MOSFET.
  • Very low RDS - Qg figure-of-merit (FOM).
  • Tuned for the lowest RDS - Qoss FOM.
  • 100 % Rg and UIS tested.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number SiJ188DP
Manufacturer Vishay
File Size 207.02 KB
Description 60V N-Channel MOSFET
Datasheet download datasheet SiJ188DP Datasheet

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www.vishay.com SiJ188DP Vishay Siliconix N-Channel 60 V (D-S) MOSFET PowerPAK® SO-8L Single 6.15 mm 1 5.13 mm Top View PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 7.5 V Qg typ. (nC) ID (A) Configuration D 1 2S 3S 4S G Bottom View 60 0.00385 0.00490 22 92.4 Single FEATURES • TrenchFET® Gen IV power MOSFET • Very low RDS - Qg figure-of-merit (FOM) • Tuned for the lowest RDS - Qoss FOM • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.
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