Click to expand full text
www.vishay.com
SiHP24N65E
Vishay Siliconix
E Series Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) max. at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
700 VGS = 10 V
122 21 37 Single
0.145
D
TO-220AB G
S D G
S N-Channel MOSFET
FEATURES
• Low figure-of-merit (FOM) Ron x Qg
• Low input capacitance (Ciss) • Reduced switching and conduction losses
• Ultra low gate charge (Qg) • Avalanche energy rated (UIS)
Available
• Material categorization: for definitions of compliance please see www.vishay.