SiHP24N65E
SiHP24N65E is Power MOSFET manufactured by Vishay.
FEATURES
- Low figure-of-merit (FOM) Ron x Qg
- Low input capacitance (Ciss)
- Reduced switching and conduction losses
- Ultra low gate charge (Qg)
- Avalanche energy rated (UIS)
Available
- Material categorization: for definitions of pliance please see .vishay./doc?99912
APPLICATIONS
- Server and tele power supplies
- Switch mode power supplies (SMPS)
- Power factor correction power supplies (PFC)
- Lighting
- High-intensity discharge (HID)
- Fluorescent ballast lighting
- Industrial
- Welding
- Induction heating
- Motor drives
- Battery chargers
- Renewable energy
- Solar (PV inverters)
ORDERING INFORMATION
Package Lead (Pb)-free Lead (Pb)-free and Halogen-free
TO-220AB Si HP24N65E-E3 Si HP24N65E-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current a Linear Derating Factor
VGS at 10 V
TC = 25 °C TC = 100 °C
Single Pulse Avalanche Energy b Maximum Power Dissipation Operating Junction and Storage Temperature Range Drain-Source Voltage Slope Reverse Diode d V/dt d
TJ = 125 °C
EAS PD TJ, Tstg d V/dt
Soldering Remendations (Peak Temperature) c for 10...
