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SiHH11N65E
Vishay Siliconix
E Series Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) typ. () at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
700 VGS = 10 V
68 9 15 Single
0.316
PowerPAK® 8 x 8
Pin 4
4
1 2 3 3
Pin 1
Pin 2
Pin 3 N-Channel MOSFET
FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Kelvin connection for reduced gate noise • Material categorization: for definitions of compliance
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SiHH11N65E Datasheet
