SiHG190N65E - Power MOSFET

Features

4th generation E series technology.
Low figure-of-merit (FOM) Ron x Qg.
Low effective capacitance (Co(er)).
Reduced switching and conduction losses.
Avalanche energy rated (UIS).
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

Vishay

Datasheet Details

Part number	SiHG190N65E
Manufacturer	Vishay
File Size	183.78 KB
Description	Power MOSFET
Datasheet	SiHG190N65E Datasheet

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Full PDF Text Transcription

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www.vishay.com SiHG190N65E Vishay Siliconix E Series Power MOSFET D TO-247AC S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. () at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 700 VGS = 10 V 33 8 7 Single 0.165 FEATURES • 4th generation E series technology • Low figure-of-merit (FOM) Ron x Qg • Low effective capacitance (Co(er)) • Reduced switching and conduction losses • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.

Published: May 13, 2024 |