SiHFZ14L Datasheet Text
.vishay.
IRFZ14S, SiHFZ14S, SiHFZ14L
Vishay Siliconix
Power MOSFET
D
I2PAK (TO-262)
D2PAK (TO-263)
S GD
D G
S
G
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
60 VGS = 10 V
11 3.1 5.8 Single
0.20
Features
- Advanced process technology
- Surface-mount (IRFZ14S, SiHFZ14S)
- Low profile through-hole (SiHFZ14L)
- 175 °C operating temperature
Available
- Fast switching
Available
- Material categorization: for definitions of pliance please see .vishay./doc?99912
Note
- This datasheet provides information about parts that are
RoHS-pliant and / or parts that are non RoHS-pliant. For example, parts with lead (Pb) terminations are not RoHS-pliant. Please see the information / tables in this datasheet for details
DESCRIPTION Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient reliable device for use in a wide variety of applications....
