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SiHB085N60EF
Vishay Siliconix
EF Series Power MOSFET With Fast Body Diode
D2PAK (TO-263)
GD S
D
G S
N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) typ. () at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
650 VGS = 10 V
63 17 9 Single
0.073
FEATURES • 4th generation E series technology • Low figure of merit (FOM) Ron x Qg • Low effective capacitance (Co(er)) • Reduced switching and conduction losses • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance
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