* TrenchFET® Gen IV power MOSFET
* Wettable flanks enhances solderability
* Fully lead (Pb)-free device
* Very low RDS x Qg figure of merit (FOM)
* 50.

D
* Synchronous rectification
* OR-ing
* Motor drive control G
* Battery management N-Channel MOS.

SIE200

SIE501.2LT

SIE501.5LT

SIE501.8LT

SIE502.1LT

SIE502.5LT

SIE503.3LT

SIE800DF

SiE802DF

SIE806DF

SIE808DF

SIE810DF

SIE812DF

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