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Si9928DY Datasheet

Complimentary 20-V (D-S) MOSFET

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Si9928DY
Vishay Siliconix
Complimentary 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
N-Channel
20
P-Channel
–20
rDS(on) (W)
0.05 @ VGS = 4.5 V
0.06 @ VGS = 3.0 V
0.08 @ VGS = 2.7 V
0.11 @ VGS = –4.5 V
0.15 @ VGS = –3.0 V
0.19 @ VGS = –2.7 V
SO-8
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
Top View
ID (A)
"5.0
"4.2
"3.6
"3.4
"2.9
"2.6
D1 D1
S2
G2
G1
S1
N-Channel MOSFET
D2 D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol N-Channel P-Channel
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
20 –20
"12
"12
"5.0
"3.4
"4.0
"2.8
"10
"10
2.0 –2.0
2.0 2.0
1.3 1.3
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
Document Number: 70143
S-00652—Rev. G, 27-Mar-00
Symbol
RthJA
N- or P-Channel
62.5
Unit
_C/W
www.vishay.com S FaxBack 408-970-5600
1


Vishay Intertechnology Electronic Components Datasheet

Si9928DY Datasheet

Complimentary 20-V (D-S) MOSFET

No Preview Available !

Si9928DY
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 mA
VDS = VGS, ID = –250 mA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "12 V
Zero Gate Voltage Drain Current
On-State Drain Currentb
IDSS
ID(on)
Drain-Source On-State Resistanceb
rDS(on)
Forward Transconductanceb
Diode Forward Voltageb
Dynamica
gfs
VSD
VDS = 16 V, VGS = 0 V
VDS = – 16 V, VGS = 0 V
VDS = 10 V, VGS = 0 V, TJ = 70_C
VDS = –10 V, VGS = 0 V, TJ = 70_C
VDS w 5 V, VGS = 4.5 V
VDS v –5 V, VGS = –4.5 V
VGS = 4.5 V, ID = 5.0 A
VGS = –4.5 V, ID = –3.2 A
VGS = 3.0 V, ID = 3.9 A
VGS = –3.0 V, ID = –2.0 A
VGS = 2.7 V, ID = 1.0 A
VGS = –2.7 V, ID = –1.0 A
VDS = 10 V, ID = 5.0 A
VDS = –9 V, ID = –3.2 A
IS = 5.0 A, VGS = 0 V
IS = –2.0 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
N-Channel
VDS = 6 V, VGS = 4.5 V, ID = 5.0 A
Qgs P-Channel
VDS = –6 V, VGS = –4.5 V, ID = –3.2 A
Qgd
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
Notes
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
N-Channel
VDD = 6 V, RL = 6 W
ID ^ 1 A, VGEN = 4.5 V, RG = 6 W
P-Channel
VDD = –6 V, RL = 6 W
ID ^ –1 A, VGEN = –4.5 V, RG = 6 W
IF = 5.0 A, di/dt = 100 A/ms
IF = –2.0 A, di/dt = 100 A/ms
Min Typa Max Unit
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
0.8
–0.8
10
–10
1.2
–1.1
"100
"100
1
–1
5
–5
0.041
0.087
0.052
0.120
0.060
0.135
13
8
0.9
–0.9
0.05
0.11
0.06
0.15
0.08
0.19
1.2
–1.2
V
nA
mA
A
W
S
V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
10 20
8 20
2.6
nC
1.6
3.7
3.5
13 30
22 40
9 40
43 80
30 60
ns
35 70
9 30
20 40
100 150
75 100
www.vishay.com S FaxBack 408-970-5600
2
Document Number: 70143
S-00652—Rev. G, 27-Mar-00


Part Number Si9928DY
Description Complimentary 20-V (D-S) MOSFET
Maker Vishay
Total Page 7 Pages
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