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Si9435DY Datasheet

P-Channel 30-V (D-S) MOSFET

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P-Channel 30-V (D-S) MOSFET
Si9435DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
–30
rDS(on) (W)
0.055 @ VGS = –10 V
0.07 @ VGS = –6 V
0.105 @ VGS = –4.5 V
S1
S2
S3
G4
SO-8
Top View
8D
7D
6D
5D
ID (A)
"5.1
"4.6
"3.6
SSS
G
DDDD
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
–30
"20
"5.1
"4.6
"20
–2.6
2.5
1.6
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambienta
RthJA
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70126
S-00652—Rev. J, 27-Mar-00
Limit
50
Unit
_C/W
www.vishay.com S FaxBack 408-970-5600
1


Vishay Intertechnology Electronic Components Datasheet

Si9435DY Datasheet

P-Channel 30-V (D-S) MOSFET

No Preview Available !

Si9435DY
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Diode Forward Voltageb
Dynamica
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = –250 mA
VDS = 0 V, VGS = "20 V
VDS = –24 V, VGS = 0 V
VDS = –15 V, VGS = 0 V, TJ = 70_C
VDS v –10 V, VGS = –10 V
VDS v –5 V, VGS = –4.5 V
VGS = –10 V, ID = –4.6 A
VGS = –6 V, ID = –4.1 A
VGS = –4.5 V, ID = –2.0 A
VDS = –15 V, ID = –4.6 A
IS = –2.6 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
VDS = –15 V, VGS = –10 V, ID = –4.6 A
VDD = –15 V, RL = 15 W
ID ^ –1 A, VGEN = –10 V, RG = 6 W
IF = 2.6 A, di/dt = 100 A/ms
Min Typa Max Unit
–1.0
–20
–5
"100
–1
–5
0.037
0.047
0.060
9.0
–0.88
0.055
0.07
0.105
–1.2
V
nA
mA
A
W
S
V
27 40
4 nC
6.3
14 30
13 60
58 120 ns
21 100
65 100
www.vishay.com S FaxBack 408-970-5600
2
Document Number: 70126
S-00652—Rev. J, 27-Mar-00


Part Number Si9435DY
Description P-Channel 30-V (D-S) MOSFET
Maker Vishay
Total Page 5 Pages
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