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Si8406DB N-Channel MOSFET

Si8406DB Description

www.vishay.com Si8406DB Vishay Siliconix N-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () MAX.0.033 at VGS = 4.5 V 20 0.037 at.

Si8406DB Features

* TrenchFET® power MOSFET
* Ultra-small 1.5 mm x 1 mm maximum outline
* Ultra-thin 0.59 mm maximum height

Si8406DB Applications

* Load switch D
* Battery management
* Boost converter Available G N-Channel MOSFET S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Curren

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N-Channel MOSFET Vishay
Vishay Si8406DB-like datasheet