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SUP60N02-4m5P - N-Channel MOSFET

Features

  • TrenchFET® Power MOSFET.
  • 175 °C Junction Temperature.
  • 100 % Rg Tested.
  • 100 % UIS Tested.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SUP60N02-4m5P Vishay Siliconix N-Channel 20-V (D-S) 175 °C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 0.0045 at VGS = 10 V 20 0.0065 at VGS = 4.5 V ID (A)a 60 60 TO-220AB FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature • 100 % Rg Tested • 100 % UIS Tested APPLICATIONS • OR-ing D RoHS COMPLIANT DRAIN connected to TAB G GD S Top View Ordering Information: SUP60N02-4m5P-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 100 °C ID Pulsed Drain Current IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.
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