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SUP50020EL - N-Channel 60-V (D-S) MOSFET

Features

  • TrenchFET® power MOSFET.
  • Maximum 175 °C junction temperature.
  • Qgd/Qgs ratio < 0.25.
  • Operable with logic-level gate drive.
  • 100 % Rg and UIS tested.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number SUP50020EL
Manufacturer Vishay
File Size 143.00 KB
Description N-Channel 60-V (D-S) MOSFET
Datasheet download datasheet SUP50020EL Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.vishay.com SUP50020EL Vishay Siliconix N-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) MAX. 0.0023 at VGS = 10 V 60 0.0028 at VGS = 4.5 V ID (A) d 120 120 Qg (TYP.) 126 nC TO-220AB Top View S D G Ordering Information: SUP50020EL-GE3 (lead (Pb)-free and halogen-free) FEATURES • TrenchFET® power MOSFET • Maximum 175 °C junction temperature • Qgd/Qgs ratio < 0.25 • Operable with logic-level gate drive • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.
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