SQD50P04-13L datasheet, mosfet equivalent, Vishay

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Features and benefits

* TrenchFET® power MOSFET
* Package with low thermal resistance
* 100 % Rg and UIS tested
* AEC-Q101 qualified d
* Material categorization: for defin.

Description

OF CHANGE D 12-Dec-14
* ID and PD (TC = 125 °C), UIS, RthJC, RDS(on) (VGS = 10 V for TJ = 125 °C and 175 °C) and gfs modified Note a. As of April 2014 S14-2536-Rev. D, 29-Dec-14 7 Document Number: 65157 For technical questions, contact: aut.

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