SQ3419AEEV Datasheet | Vishay

FEATURES - Trench FET® power MOSFET - AEC-Q101 qualified c - 100 % Rg and UIS tested - Typical ESD protection 800 V - Material categorization: for definitions of pliance please see .vishay./doc?99912 (1, 2, 5, 6) D (3) G P-Channel MOSFET (4) S ORDERING INFORMATION Package Lead (Pb)-free and halogen-free TSOP-6 SQ3419AEEV (for detailed order number please see .vishay./doc?79771) ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current Continuous source current (diode conduction) Pulsed drain current Single pulse avalanche current Single pulse avalanche energy Maximum power dissipation a Operating junction and storage temperature range TC = 25 °C TC = 125 °C L = 0.1 m H TC = 25 °C TC = 125 °C VDS VGS IS IDM IAS EAS TJ, Tstg LIMIT -40 ± 12 -6.9 -4 -6.3 -27 -18 16.7 5 1.6 -55 to +175 UNIT V A m J W °C THERMAL RESISTANCE RATINGS PARAMETER Junction to ambient Junction to case (drain) Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. When mounted on 1" square PCB (FR4 material). c. Parametric verification ongoing. PCB mount b SYMBOL Rth JA Rth JF LIMIT 110...