* TrenchFET® Gen III p-channel power MOSFET
* Ultra small 0.8 mm x 0.6 mm outline
* Ultra thin 0.4 mm max. height
* Typical ESD protection 1500 V (HBM)

* Load switch
* High speed switching
* Power management in battery-operated, mobile and wearable devices S .

SiUD402ED

SIUD412ED

SI-10022

SI-1010G

SI-1020G

SI-10267

SI-1030G

SI-1050G

SI-1125HD

SI-16001

SI-3000B

SI-3000C

SI-3000F

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