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SIS496EDNT - N-Channel MOSFET

Features

  • TrenchFET® power MOSFET.
  • 100 % Rg and UIS tested.
  • Thin 0.75 mm height.
  • Typical ESD performance 2500 V.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.vishay.com SiS496EDNT Vishay Siliconix N-Channel 30 V (D-S) MOSFET PowerPAK® 1212-8S D D D 6 7 5 D 8 3.3 mm 1 Top View 3.3 mm PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) Configuration 1 4 3 S 2 S S G Bottom View 30 0.0048 0.0062 14 50 a Single FEATURES • TrenchFET® power MOSFET • 100 % Rg and UIS tested • Thin 0.75 mm height • Typical ESD performance 2500 V • Material categorization: for definitions of compliance please see www.vishay.
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