SIS407DN
FEATURES
- Trench FET® power MOSFET
- Low thermal resistance Power PAK® package with small size and low 1.07 mm profile
- 100 % Rg and UIS tested
- Material categorization: for definitions of pliance please see .vishay./doc?99912
APPLICATIONS
- Load switch
- Battery switch
D P-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free and halogen-free
Power PAK 1212-8 Si S407DN-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage Gate-source voltage
Continuous drain current (TJ = 150 °C) a
Pulsed drain current Continuous source-drain diode current Avalanche current Single pulse avalanche energy
Maximum power dissipation
Operating junction and storage temperature range Soldering remendations (peak temperature) b, c
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
TC = 25 °C TA = 70 °C L = 0.1 m H
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
VDS VGS
IDM IS IAS EAS
TJ, Tstg
LIMIT
-20 ±8 -25 f -25 f -15.4 a, b -12.3 a, b -40 -25 f -3 a, b -20 20 33 21 3.6 a, b 2.3 a, b -55 to +150 260
UNIT V
A m J W °C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYPICAL
MAXIMUM
UNIT
Maximum junction-to-ambient a, e Maximum junction-to-case (drain) t 10...
