SIS406DN
SIS406DN is N-Channel 30V MOSFET manufactured by Vishay.
FEATURES
- Trench FET® power MOSFET
- PWM optimized
- New low thermal resistance Power PAK® package with low 1.07 mm profile
- 100 % Rg and UIS tested
- Material categorization: for definitions of pliance please see .vishay./doc?99912
APPLICATIONS
- Adaptor switch
- Load switch
S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free and halogen-free
Power PAK 1212-8 Si S406DN-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
10 S
Drain-source voltage Gate-source voltage
Continuous drain current (TJ = 150 °C) a
Pulsed drain current Continuous source current (diode conduction) a Single pulse avalanche current Avalanche energy
Maximum power dissipation a
Operating junction and storage temperature range Soldering remendations (peak temperature) b, c
TA = 25 °C TA = 70 °C
L = 0.1 m H TA = 25 °C TA = 70 °C
VDS VGS
IDM IS IAS EAS
TJ, Tstg
30 ± 25 14 12.2 50 3.3 20 20 3.7 2.3 -55 to +150 260
STEADY STATE
30 ± 25
9 7.3 50 1.4 20 20 1.5 1 -55 to +150 260
UNIT V
A m J W °C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL...
