SIHFD113 Datasheet | Vishay

FEATURES - For Automatic Insertion - pact Plastic Package - End Stackable - Fast Switching - Low Drive Current - Easily Paralleled - Excellent Temperature Stability - pliant to Ro HS Directive 2002/95/EC Note - Pb containing terminations are not Ro HS pliant, exemptions may apply DESCRIPTION The HVMDIP technology is the key to Vishay’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of the HVMDIP design achieves very low on-state resistance bined with high transconductance and extreme device ruggedness. HVMDIPs feature all of the established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling, and temperature stability of the electrical parameters. The HVMDIP 4 pin, dual-in-line package brings the advantages of HVMDIPs to high volume applications where automatic PC board insertion is desireable, such as circuit boards for puters, printers, telemunications equipment, and consumer products. Their patibility with automatic insertion equipment, low-profile and end stackable features represent the stat-of-the-art in power device packaging. HVMDIP IRFD113Pb F Si HFD113-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltagea Gate-Source Voltage Continuous Drain Current Pulsed Drain Currentb VGS at 10 V TC = 25 °C ID IDM Linear Derating Factor Inductive Current, Clamped Maximum Power Dissipation L = 100 μH TC = 25 °C ILM PD Operating Junction and Storage Temperature Range TJ, Tstg Soldering Remendations (Peak Temperature) for 10 s Notes a. TJ = 25 °C to 150 °C b. Repetitive rating; pulse width limited by maximum junction temperature. c. 1.6 mm from case. LIMIT 60 ± 20 0.8 6.4 0.008 6.4 1.0 - 55 to + 150 300c UNIT V A W/°C A W °C S11-2479-Rev. A,...