SI7900AEDN - Dual N-Channel MOSFET

Vishay

Key Features

TrenchFET® power MOSFET: 1.8 V rated.
New PowerPak® package - Low thermal resistance, RthJC - Low 1.07 mm profile.
3000 V ESD protection.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

SI7900AEDN dual n-channel mosfet by Vishay - Datasheet Preview

Datasheet Details

Part number	SI7900AEDN
Manufacturer	Vishay
File Size	619.56 KB
Description	Dual N-Channel MOSFET
Datasheet	SI7900AEDN Datasheet

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Full PDF Text Transcription (Reference)

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www.vishay.com Si7900AEDN Vishay Siliconix Dual N-Channel 20 V (D-S) MOSFET, Common Drain PowerPAK® 1212-8 D D8 D7 D6 5 3.3 mm 1 Top View 3.3 mm PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 4.5 V RDS(on) max. () at VGS = 2.5 V RDS(on) max. () at VGS = 1.8 V Qg typ. (nC) ID (A) Configuration 1 4 G2 3 S2 2 G1 S1 Bottom View 20 0.026 0.030 0.036 10.5 8.5 Common drain FEATURES • TrenchFET® power MOSFET: 1.8 V rated • New PowerPak® package - Low thermal resistance, RthJC - Low 1.07 mm profile • 3000 V ESD protection • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Protection switch for 1-2 Li-ion batteries D1 D2 2.6 k G1 2.