SFH640
Overview
The SFH640 has a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a plastic DIP-6 package. It features a high current transfer ratio, low coupling capacitance, and high isolation voltage.
- Phototransistor optocoupler in a 6 pin DIP package with base connection
- Very high collector emitter breakdown voltage, BVCEO = 300 V
- Isolation rated voltage: 5000 VRMS
- Low coupling capacitance
- High common m;ode transient immunity
- Material categorization: for definitions of compliance please see
