Description
The 110 °C rated SFH1617A (DIP) feature a high current transfer ratio, low coupling capacitance and high isolation voltage.
These couplers have a GaAs infrared diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a plastic DIP-4 package.
Features
- Operating temperature from - 55 °C to + 110 °C.
- Good CTR linearity depending on forward
current.
- Isolation test voltage, 5000 VRMS.
- High collector emitter voltage, VCEO = 70 V.
- Low saturation voltage.
- Fast switching times.
- Low CTR degradation.
- Temperature stable.
- Low coupling capacitance.
- End stackable, 0.100" (2.54 mm) spacing.
- High common mode interference immunity.
- Material categorizat.