MGDT100125
FEATURES
- Deliver MOSFET / IGBT gate power and timing signals simultaneously
Available
- Directly drive high side MOSFETs / IGBTs on busses up to 1200 V
- Excellent rise time, overshoot, and peak current characteristics
- 8 mm minimum creepage and clearance from drive to gates
- Low profile planar package
- LF and SM versions are Ro HS-pliant
- Material categorization: for definitions of pliance please see .vishay./doc?99912
Note
- This datasheet provides information about parts that are
Ro HS-pliant and / or parts that are non Ro HS-pliant. For example, parts with lead (Pb) terminations are not Ro HS-pliant.
Please see the information / tables in this datasheet for details
STANDARD ELECTRICAL SPECIFICATIONS
PART NUMBER
USEFUL FREQ. RANGE (k Hz)
TRANSFER
RATIO (± 3 %) (1)
DRIVE EXCITATION
MAX. (Vμs)
MGDT100100
MGDT100100LF
MGDT100100-SM MGDT100125 MGDT100125LF MGDT100125-SM
100 to 500 1 : 1 : 1 100 to 500 1 : 1 : 1 100 to 500 1 : 1 : 1 100 to 500 1 : 1.25 : 1.25 100 to...
