MBRF10100CT-M3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier
Vishay
Download the MBRF10100CT-M3 datasheet PDF.
This datasheet also covers the MBRF1090CT-M3 variant, as both devices belong to the same dual high voltage trench mos barrier schottky rectifier family and are provided as variant models within a single manufacturer datasheet.
Key Features
Trench MOS Schottky technology.
Lower power losses, high efficiency.
Low forward voltage drop.
High forward surge capability.
High frequency operation.
Solder dip 275 °C max. 10 s, per JESD 22-B106.
Material categorization: for definitions of compliance
please see www. vishay. com/doc?99912.
Full PDF Text Transcription for MBRF10100CT-M3 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
MBRF10100CT-M3. For precise diagrams, and layout, please refer to the original PDF.
www.vishay.com MBRF1090CT-M3, MBRF10100CT-M3 Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier TMBS® ITO-220AB PIN 1 PIN 3 123 PIN 2 FE...
View more extracted text
OS Barrier Schottky Rectifier TMBS® ITO-220AB PIN 1 PIN 3 123 PIN 2 FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters or polarity protection application. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF TJ max. Package 2 x 5.0 A 90 V, 100 V 120 A 0.
MBRF10100CT-M3 Datasheet
