MBRB2090CT-E3 Datasheet | Vishay

FEATURES - Trench MOS Schottky technology - Lower power losses, high efficiency - Low forward voltage drop - High forward surge capability - High frequency operation - Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) - Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB and ITO-220AB package) - Material categorization: for definitions of pliance please see .vishay./doc?99912 TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters or polarity protection application. MECHANICAL DATA Case: TO-220AB, ITO-220AB, D2PAK (TO-263AB) Molding pound meets UL 94 V-0 flammability rating Base P/N-E3 - Ro HS-pliant, mercial grade Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: as marked Mounting Torque: 10 in-lbs maximum                     MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Working peak reverse voltage Maximum DC blocking voltage Maximum average forward rectified current at TC = 133 °C total device per diode Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode Non-repetitive avalanche energy at TJ = 25 °C, L = 60 m H per diode Peak repetitive reverse current at tp = 2 μs, 1 k Hz, TJ = 38 °C ± 2 °C per diode Voltage rate of change (rated VR) Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min Operating junction and storage temperature range SYMBOL VRRM VRWM VDC IF(AV) IFSM EAS IRRM d V/dt VAC TJ, TSTG MBR2090CT...