IRLI640G Datasheet - Vishay

IRLI640G ower MOSFET

Third generation power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The moldi.

IRLI640G Features

* Isolated package

* High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)

* Sink to lead creepage distance = 4.8 mm

* Logic-level gate drive

* RDS(on) specified at VGS = 4 V and 5 V

* Fast switching

* Ease of paralleling

* Material

IRLI640G Datasheet (1.03 MB)