Datasheet4U Logo Datasheet4U.com

IRLD024 - Power MOSFET

General Description

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Key Features

  • Dynamic dV/dt rating.
  • For automatic insertion.
  • End stackable.
  • Logic-level gate drive.
  • RDS(on) dpecified at VGS = 4 V and 5 V.
  • 175 °C operating temperature.
  • Fast switching.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

📥 Download Datasheet

Datasheet Details

Part number IRLD024
Manufacturer Vishay
File Size 830.22 KB
Description Power MOSFET
Datasheet download datasheet IRLD024 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.vishay.com IRLD024 Vishay Siliconix Power MOSFET D HVMDIP S G D G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 5.0 V 18 4.5 12 Single 0.10 FEATURES • Dynamic dV/dt rating • For automatic insertion • End stackable • Logic-level gate drive • RDS(on) dpecified at VGS = 4 V and 5 V • 175 °C operating temperature • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.