IRLD014
Overview
G S S N-Channel MOSFET G Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertiable case style which can be stacked in multiple combinations on standard 0.1" pin centers.
- Dynamic dV/dt Rating
- For Automatic Insertion
- End Stackable
- Logic-Level Gate Drive
- RDS(on) Specified at VGS = 4 V and 5 V
- 175 °C Operating Temperature
- Fast Switching
- Compliant to RoHS Directive 2002/95/EC Available RoHS*