IRLD014 Datasheet | Vishay

FEATURES 60 0.20 - Dynamic d V/dt Rating - For Automatic Insertion - End Stackable - Logic-Level Gate Drive - RDS(on) Specified at VGS = 4 V and 5 V - 175 °C Operating Temperature - Fast Switching - pliant to Ro HS Directive 2002/95/EC Available Ro HS- PLIANT HVMDIP DESCRIPTION G S D S N-Channel MOSFET G Third generation Power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertiable case style which can be stacked in multiple binations on standard 0.1" pin centers. The dual drain servers as a thermal link to the mounting surface for power dissipation levels up to 1 W. ORDERING INFORMATION Package Lead (Pb)-free Sn Pb HVMDIP IRLD014Pb F Si HLD014-E3 IRLD014 Si HLD014 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Maximum Power Dissipation Peak Diode Recovery d V/dtc TA = 25 °C EAS PD d V/dt TJ, Tstg for 10 s VGS at 5.0 V TA = 25 °C TA = 100 °C SYMBOL VDS VGS ID IDM LIMIT 60 ± 10 1.7 1.2 14 0.0083 490 1.3 4.5 - 55 to + 175 300d W/°C m J W V/ns °C A UNIT V Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 197 m H, Rg = 25 , IAS = 1.7 A (see fig. 12). c. ISD  10 A, d I/dt  90 A/µs, VDD  VDS, TJ  175 °C. d. 1.6 mm from case. - Pb containing terminations are not Ro HS pliant, exemptions may apply Document Number: 91307 S10-2465-Rev. D, 08-Nov-10 .vishay. 1 Free Datasheet http://..net/ IRLD014, Si HLD014 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient SYMBOL Rth JA TYP. MAX. 120 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER...