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IRFI840GLC - Power MOSFET

Description

This series of low charge power MOSFETs achieve significantly lower gate charge over conventional MOSFETs.

Utilizing advanced power MOSFET technology, the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings.

Features

  • Ultra low gate charge.
  • Reduced gate drive requirement.
  • Enhanced 30 V VGS rating.
  • Isolated package.
  • High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz).
  • Sink to lead creepage distance = 4.8 mm.
  • Repetitive avalanche rated.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet preview – IRFI840GLC

Datasheet Details

Part number IRFI840GLC
Manufacturer Vishay
File Size 953.31 KB
Description Power MOSFET
Datasheet download datasheet IRFI840GLC Datasheet
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Full PDF Text Transcription

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www.vishay.com IRFI840GLC Vishay Siliconix Power MOSFET D TO-220 FULLPAK G S GD S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 39 10 19 Single 0.85 FEATURES • Ultra low gate charge • Reduced gate drive requirement • Enhanced 30 V VGS rating • Isolated package • High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to lead creepage distance = 4.8 mm • Repetitive avalanche rated • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION This series of low charge power MOSFETs achieve significantly lower gate charge over conventional MOSFETs.
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