IRFI840GLC
Description
This series of low charge power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced power MOSFET technology, the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings.
Key Features
- Ultra low gate charge
- Reduced gate drive requirement
- Enhanced 30 V VGS rating
- Isolated package
- High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
- Sink to lead creepage distance = 4.8 mm
- Repetitive avalanche rated
- Material categorization: for definitions of compliance please see
