IRFD9220 Datasheet | Vishay

FEATURES - Dynamic d V/dt rating - Repetitive avalanche rated - For automatic insertion - End stackable - P-channel - Fast switching - Ease of paralleling - Material categorization: for definitions of pliance please see .vishay./doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple binations on standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W. ORDERING INFORMATION Package Lead (Pb)-free HVMDIP IRFD9220Pb F ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current a Linear derating factor Single pulse avalanche energy b Repetitive avalanche current a Repetitive avalanche energy a Maximum power dissipation Peak diode recovery dv/dt c VGS at -10 V TA = 25 °C TA = 100 °C TA = 25 °C VDS VGS EAS IAR EAR PD d V/dt Operating junction and storage temperature range Soldering r Remendations (peak temperature) d For 10 s TJ, Tstg Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. VDD = -50 V, starting TJ = 25 °C, L = 17.8 m H, Rg = 25 Ω, IAS = -3 A (see fig. 12) c. ISD ≤ -3.9 A, d I/dt ≤ 95 A/μs, VDD ≤ VDS, TJ ≤ 150 °C d. 1.6 mm from case LIMIT -200 ± 20 -0.56 -0.36 -4.5 0.0083 80 -0.56 0.10 1 -5 -55 to + 150 300d UNIT V W/°C m J A m J W V/ns °C S21-0887-Rev. E, 30-Aug-2021 Document Number: 91141 For technical questions, contact:...