Click to expand full text
www.vishay.com
IRFD9220
Vishay Siliconix
Power MOSFET
HVMDIP
S G
S G
D
D P-Channel MOSFET
PRODUCT SUMMARY
VDS (V)
-200
RDS(on) (Ω)
VGS = -10 V
1.5
Qg (Max.) (nC)
15
Qgs (nC)
3.2
Qgd (nC)
8.4
Configuration
Single
FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • For automatic insertion • End stackable • P-channel • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.