IRFD014PbF Datasheet | Vishay

FEATURES - Dynamic d V/dt Rating - For Automatic Insertion - End Stackable - 175 °C Operating Temperature - Fast Switching - Ease of Paralleling - Simple Drive Requirements - pliant to Ro HS Directive 2002/95/EC Available Ro HS- PLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple binations on standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W. HVMDIP IRFD014Pb F Si HFD014-E3 IRFD014 Si HFD014 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta TA = 25 °C VGS at 10 V TA = 100 °C Linear Derating Factor Single Pulse Avalanche Energyb Maximum Power Dissipation Peak Diode Recovery d V/dtc TA = 25 °C PD d V/dt Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature) for 10 s TJ, Tstg Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 52 m H, Rg = 25 , IAS = 1.7 A (see fig. 12). c. ISD  10 A, d I/dt  90 A/μs, VDD  VDS, TJ  175 °C. d. 1.6 mm from case. LIMIT 60 ± 20 1.7 1.2 14 0.0083 130 1.3 4.5 - 55 to + 175...