IRFBC20S Datasheet | Vishay

IRFBC20S, Si HFBC20S, IRFBC20L, Si HFBC20L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (n C) Qgs (n C) Qgd (n C) Configuration VGS = 10 V 18 3.0 8.9 Single 600 4.4 - Halogen-free According to IEC 61249-2-21 Definition - Surface Mount (IRFBC20S, Si HFBC20S) - Low-Profile Through-Hole (IRFBC20L, Si HFBC20L) - Available in Tape and Reel (IRFBC20, Sii HFBC20S) - Dynamic d V/dt Rating - 150 °C Operating Temperature - Fast Switching - Fully Avalanche Rated - pliant to Ro HS Directive 2002/95/EC Third generation Power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of the acmodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (IRFBC20L, Si HFBC20L) is a available for low-profile applications. Features I2PAK (TO-262) D2PAK (TO-263) DESCRIPTION G D S S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free Note a. See device orientation. D2PAK (TO-263) Si HFBC20S-GE3 IRFBC20SPb F Si HFBC20S-E3 D2PAK (TO-263) Si HFBC20STRL-GE3a IRFBC20STRLPb Fa Si HFBC20STL-E3a I2PAK (TO-262) Si HFBC20L-GE3 IRFBC20LPb F Si...