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IRFB13N50A - Power MOSFET

Features

  • Lower Gate Charge Qg Results in Simpler Drive Reqirements Available.
  • Improved Gate, Avalanche and Dynamic dV/dt Available Ruggedness.
  • Fully Characterized Capacitance and Avalanche Voltage.
  • Compliant to RoHS Directive 2002/95/EC.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IRFB13N50A, SiHFB13N50A Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 81 20 36 Single D TO-220AB 0.
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