IRF840LCL mosfet equivalent, power mosfet.
* Ultra low gate charge
* Reduced gate drive requirement
* Enhanced 30 V VGS rating
* Reduced Ciss, Coss, Crss
* Extremely high frequency operation.
Frequencies of a few MHz at high current are possible using the new low charge Power MOSFETs.
These device improvements.
This series of low charge power MOSFETs achieve significantly lower gate charge then conventional Power MOSFETs. Utilizing the new LCDMOS (low charge device Power MOSFETs) technology, the device improvements are achieved without added product cost, a.
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