DG636E switch equivalent, dual spdt analog switch.
* Ultra low charge injection
(Less than ± 0.3 pC, typ. over the full analog signal range)
* Leakage current < 0.5 nA max. at 85 °C (for DG636EEQ-T1-GE4)
* Low.
* Data acquisition systems
* Medical instruments
* Precision instruments
* Communications systems
* .
The DG636E is a dual SPDT CMOS, analog switch, designed to operate from a +3 V to +16 V single supply, or from ± 3 V to ± 8 V, dual supplies. The DG636E is fully specified at +3 V, +5 V, and ± 5 V.
The DG636E offers ultralow charge injection less tha.
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