CPV364M4KPbF igbt equivalent, fast igbt.
* Short circuit rated ultrafast: Optimized for high
speed > 5.0 kHz, and short circuit rated to 10 μs
at 125 °C, VGE = 15 V
RoHS
* Fully isolated printed cir.
and where space is at a premium.
ABSOLUTE MAXIMUM RATINGS
PARAMETER Collector to emitter voltage
SYMBOL VCES
Continuo.
The IGBT technology is the key to Vishay´s Semiconductors advanced line of IMS (Insulated Metal Substrate) power modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-driv.
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