VSZ160N10MS Datasheet | Vanguard Semiconductor

Features - Enhancement mode - Fast Switching and High efficiency - Pb-free lead plating; RoHS pliant 100V/3A N-Channel Advanced Power MOSFET V DS R @ DS(on),TYP VGS=10 V R @ DS(on),TYP VGS=4.5 V ID 100 V 135 mΩ 150 mΩ SOT223 Part ID VSZ160N10MS Package Type SOT223 Marking 160N10M Tape and reel information 2500PCS/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage Gate-Source voltage Diode continuous forward current Continuous drain current @VGS=10V Pulse drain current tested ① PD TSTG , TJ Maximum power dissipation Storage and junction temperature range Thermal...