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VSZ160N10MS - N-Channel Advanced Power MOSFET

Features

  • Enhancement mode.
  • Fast Switching and High efficiency.
  • Pb-free lead plating; RoHS compliant VSZ160N10MS 100V/3A N-Channel Advanced Power MOSFET V DS R @ DS(on),TYP VGS=10 V R @ DS(on),TYP VGS=4.5 V ID 100 V 135 mΩ 150 mΩ 3 A SOT223 Part ID VSZ160N10MS Package Type SOT223 Marking 160N10M Tape and reel information 2500PCS/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS VGS Drain-Source breakdown voltage Gate-Source voltage IS.

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Datasheet Details

Part number VSZ160N10MS
Manufacturer Vanguard Semiconductor
File Size 542.49 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet VSZ160N10MS Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Features  Enhancement mode  Fast Switching and High efficiency  Pb-free lead plating; RoHS compliant VSZ160N10MS 100V/3A N-Channel Advanced Power MOSFET V DS R @ DS(on),TYP VGS=10 V R @ DS(on),TYP VGS=4.
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