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VSO011P03MD - Dual P-Channel Advanced Power MOSFET

Features

  • Dual P-Channel,-5V Logic Level Control.
  • Enhancement mode.
  • Very low on-resistance RDS(on) @ VGS=-4.5 V.
  • Fast Switching.
  • High Effective.
  • Pb-free lead plating; RoHS compliant; Hg-Free V DS R @DS(on),TYP VGS=-10 V R @DS(on),TYP VGS=-4.5 V ID -30 11 15 -13 SOP8 V mΩ mΩ A Part ID VSO011P03MD Package Type SOP8 Marking 011P03MD Tape and reel information 3000pcs/reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-So.

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Datasheet Details

Part number VSO011P03MD
Manufacturer Vanguard Semiconductor
File Size 369.59 KB
Description Dual P-Channel Advanced Power MOSFET
Datasheet download datasheet VSO011P03MD Datasheet

Full PDF Text Transcription (Reference)

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VSO011P03MD -30V/-13A Dual P-Channel Advanced Power MOSFET Features  Dual P-Channel,-5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=-4.5 V  Fast Switching  High Effective  Pb-free lead plating; RoHS compliant; Hg-Free V DS R @DS(on),TYP VGS=-10 V R @DS(on),TYP VGS=-4.
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